mesfet in a sentence

• This was shown to be extremely effective at modelling field-effect transistors such as the popular metal semiconductor FET ( MESFET ).
• The field effect underlies the operation of the Schottky diode and of field-effect transistors, notably the MOSFET, the JFET and the MESFET.
• The company's 6-inch GaAs manufacturing facility uses the industry s latest technology and manufacturing processes to deliver InGaP HBT, GaAs MESFET, and GaAs pHEMT RFIC products.
• In addition, Big Creek is the hometown of Carver Mead, a Caltech electrical engineering professor who is responsible for developing the first GaAs MESFET and for his pioneering contributions to VLSI design.
• In this tenure, he successfully developed and transferred AlGaAs / GaAs Heterojunction Bipolar Transistor ( HBT ) and BiFET ( Planar HBT / MESFET ) integrated circuits technologies from the research laboratory to the production line.
• Bell Labs'attorneys soon discovered that Shockley's field effect principle had been anticipated and patented in 1930 by Julius Lilienfeld, who filed his MESFET-like patent in Canada on October 22, 1925.
• The company's proprietary technology enables high voltage Si-MESFET transistors to be fabricated on commercial SOI CMOS processes without altering the native process or adding additional fabrication steps which allows high levels of monolithic integration.
• Bell Labs'attorneys soon discovered Shockley's field effect principle had been anticipated and devices based on it patented in 1930 by Julius Lilienfeld, who filed his MESFET-like patent in Canada on October 22, 1925.
• A MESFET or metal semiconductor FET uses a reverse-biased Schottky barrier to provide a depletion region that pinches off a conducting channel buried inside the semiconductor ( similar to the JFET where instead a p n junction provides the depletion region ).
• The circuit, with minor modifications, can be implemented in many integrated circuit ( IC ) technologies, including Gallium Arsenide ( GaAs ) MESFET, GaAs Heterojunction Bipolar Transistor ( HBT ), GaAs High Electron Mobility Transistor ( HEMT ), Silicon-Germanium ( SiGe ), Indium Phosphide ( InP ), and Silicon bipolar or MOS technology.
• It's difficult to see mesfet in a sentence .
• The IPO of the company on the NASDAQ stock market occurred on June 3, 1997 under the symbol RFMD . At the time of the IPO, the company was a pioneer and leader in the use GaAs HBT process technology for commercial wireless applications, which had benefits in power efficiency, linearity, complexity and size, while also having expertise in older GaAs MESFET and silicon polar transistor process technology.
• Yokoyama received the 1987 GaAs Symposium Young Scientist Award, and 1998 IEEE Morris N . Liebmann Memorial Award " for contributions to and leadership in the development of self-aligned refractory-gate gallium arsenide MESFET integrated circuits . " He was elected an IEEE Fellow in 2000, Fellow of the Institute of Electronics, Information and Communication Engineers in 2003, and Fellow of the Applied Physics Society in 2007.