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oxygen vacancy in Chinese

Pronunciation:
How to pronounce "oxygen vacancy""oxygen vacancy" in a sentence
TranslationMobile
  • 氧缺位
Examples
  • On the other hand , oxygen plasma treatment makes ito film oxidized further , which decreases the number of oxygen vacancy and sn ~ ( 4 + )
    另一方面,氧等离子体处理使ito薄膜表面的富sn氧化物进一步氧化,形成稳定的sno ,减少了ito薄膜表面的氧空位和sn ~ ( 4 + )数量,使其功函数增大。
  • Compared with pl of pure nanotube , the emission peak energy shift value was larger . this may result from the formation of oxygen vacancies in the nanotube during the process of surface - modification
    ( 2 )使用十六醇对纳米管钛酸进行了化学修饰,结果表明纳米管表面与十六醇发生酯化反应。
  • The subst - itutional oxygen vacancies and tin contributing to its high conductivity . the high optical transmittance of ito films is a direct consequence of it being a wide band gap ( eg > 3ev )
    Ito结构中的氧空位和锡掺杂使得它具有很强的导电性,较大的能带间隙宽度( e _ g 3ev )使得它具有很强的光透明性。
  • The uv - visible absorption spectrum showed the as - prepared aam templates were transparent within visible light , and the pl curve showed the as - prepared aam templates had a blue pl band in wavelength range of 400nm ~ 60qnm which originated from singly ionized oxygen vacancies
    从光致发光特性曲线发现,纳米孔阵列aam在400一600nm之间有一个蓝色发光带,该发光带来源于单离子氧空位。
  • In the discussion of visible luminescence mechanism , in order to prove that the oxygen vacancies or defects distribute on the surface of nanocrystallites , we presented to prepare the zno thin films with doped mn and studied the photoluminescence of zno : mn
    在可见发光机制探讨中,为了证明氧空位或缺陷是分布在纳米晶表面,我们提出氧化锌中掺杂锰( zno : mn ) ,研究了zno : mn薄膜的光致发光( pl ) 。
  • It was found from the experiment that , with the increasing of substrate temperature , there were more oxygen vacancies in the films , which lead the conductance of the sample become larger , and the absorb edge of zno thin films shifted toward higher wavelength ; with increasing of ar : o2 ratio , there were lesser oxygen vacancies in the films , which lead the absorb edge of zno thin films shifted toward lower wavelength
    实验还发现,随着衬底温度的升高,薄膜中产生的氧空位将会增多,使得zno薄膜的电导逐渐增大,而且其紫外透射吸收截止边带向高波长方向漂移;随着氩氧比例的增加,薄膜中的氧缺陷相对减少,薄膜的透射吸收截止边向低波长方向漂移。
  • It was found from the experiment that , with the increasing of substrate temperature , there were more oxygen vacancies in the films , which lead the conductance of the sample become larger , and the absorb edge of ito thin films shifted toward lower wavelength ; with increasing of ar : o2 ratio , there were lesser oxygen vacancies in the films , which lead the absorb edge of ito thin films shifted toward lower wavelength
    实验还发现,在一定的温度范围内随着衬底温度的升高,薄膜中产生的氧空位将会增多,使得ito薄膜的电导逐渐增大,而且其紫外透射吸收截止边带向短波长方向漂移;随着氩氧比例的增加,薄膜中的氧缺陷相对减少,薄膜的透射吸收截止边向低波长方向漂移。
  • The magnitude of the conductivity maximum increases and shifts to lower temperature with increasing sr content . in this paper , the electrical conductivity reaches maximum value at x = 0 . 4 . below the temperature corresponding to the maximum value , the electrical conductivity is found to follow the relationship for the small polaron hopping mechanism , charge compensation of oxygen vacancy dominates electrical conduction at high temperature , and oxygen vacancy acts as traps to catch carriers , resulting in the decrease of carriers concentration and mobility
    通过电学和热学性能测试结果表明,电导率随着sr含量的增加以及温度的变化都出现了极大值,在本论文中,在sr含量为0 . 4时电导率值最大,电导率最大值对应的温度随着sr含量的增加而降低,这是由于在低温下以小极化子导电机理为主,在高温阶段则是氧空位的电荷补偿占据主导作用,氧空位使得载流子的浓度和可动性减弱,从而导致电导率降低。
  • With the increase of the amount of al , the intensity of the pl peak at 510nm increases . with the aid of ple we can suggest that pl peak at 370nm and 410nm are related to the oxygen vacancies , and 510nm peak originate from a complex co - function of al , si , and o . el devices have been fabricated on three types of silicon based oxide films ( ge - sio2 films , si - sio2 films , and al - sio2 films )
    用不同的方法制备的51一5102薄膜、 ge一510 :薄膜和al一51一5102薄膜,在较低的电压万均观察到了室温可见电致发光现象,峰位都在510nm左右,其峰位不因薄膜样品内所含颗粒的种类、薄膜的制备方法、偏压及后处理的影响,表明电致发光主要来源于电子和空穴在510 、基质中的发光中心的辐射复合发光。
  • By examining the vacancy formation energy of three kinds of defect sno _ 2 ( 110 ) surface , the most energetically favorable defect surface is that the surface possesses the coexistence of bridging and in - plane oxygen vacancies , which is different with the traditional defect model by only removing bridging oxygen
    通过考察形成三种不同类型sno _ 2 ( 110 )缺陷表面的缺陷形成能,结果表明,形成同时具有桥氧和面氧缺陷的构型能量上最为有利,这与通常所认为的桥氧缺陷最为稳定不同。
  • More examples:  1  2
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